View MC100EL1648-D_2216292.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

? semiconductor components industries, llc, 2001 april, 2001 rev. 2 1 publication order number: mc100el1648/d mc100el1648 5vecl voltage controlled oscillator the mc100el1648 is a voltage controlled oscillator that requires an external parallel tank circuit consisting of the inductor (l) and capacitor (c). a varactor diode may be incorporated into the tank circuit to provide a voltage variable input for the oscillator (vco). this device may also be used in many other applications requiring a fixed frequency clock. the mc100el1648 is ideal in applications requiring a local oscillator, systems that include electronic test equipment, and digital highspeed telecommunications. the mc100el1648 is based on the vco circuit topology of the mc1648. the mc100el1648 uses advanced bipolar process technology which results in a design which can operate at an extended frequency range. the ecl output circuitry of the mc100el1648 is not a traditional open emitter output structure and instead has an onchip termination emitter resistor, r e , with a nominal value of 510 ohms. this facilitates direct accoupling of the output signal into a transmission line. because of this output configuration, an external pulldown resistor is not required to provide the output with a dc current path. this output is intended to drive one ecl load (3.0 pf). if the user needs to fanout the signal, an ecl buffer such as the el16 (el11, el14) type line receiver/driver should be used. note: the mc100el1648 is not useable as a crystal oscillator. ? typical operating frequency up to 1100 mhz ? lowpower 19 ma at 5.0 vdc power supply ? phase noise 90 dbc/hz at 25 khz typical ? pecl mode operating range: v cc = 5.0 v with v ee = 0 v ? necl mode operating range: v cc = 0 v with v ee = 5.2 v ? input capacitance = 6.0 pf (typ) ? esd protection: >2 kv hbm, >100 v mm ? meets or exceeds jedec spec eia/jesd78 ic latchup test ? moisture sensitivity level 1 for additional information, see application note and8003/d ? flammability rating: ul94 code v0 @ 1/8o, oxygen index 28 to 34 ? transistor count = 11 devices http://onsemi.com marking diagrams* k = mc100 a = assembly location l = wafer lot y = year w = work week soic eiaj14 m suffix case 965 1 14 14 1 el1648 alyw device package shipping ordering information mc100el1648d so8 98 units / rail mc100el1648dr2 so8 2500 units / reel mc100el1648dt tssop8 98 units / rail mc100el1648dtr2 tssop8 2500 / reel mc100el1648m soic eiaj14 50 units / rail mc100el1648mel soic eiaj14 2500 units / reel *for additional information, see application note and8002/d so8 d suffix case 751 tssop8 dt suffix case 948r 1 8 1 8 alyw 1648 1 8 alyw k1648
mc100el1648 http://onsemi.com 2 13 14 12 11 10 9 8 2 1 34567 v cc nc tank nc bias nc v ee v cc nc out nc agc nc v ee bias tank v ee v cc v cc agc out figure 1. pinout assignments v ee pin function pin description bias osc input reference voltage tank osc input voltage agc automatic gain control input out ecl output v cc positive supply v ee negative supply 8 lead 14 lead warning: all v cc and v ee pins must be externally connected to power supply to guarantee proper operation. 123 7 4 5 6 8 nc no connect 8 ld 14 ld 8 1 5 4 2, 3 6, 7 10 12 5 3 1, 14 7, 8 2, 4, 7, 9, 11, 13 v ee v cc v cc v ee outpu t agc bias point tank external tank circuit figure 2. logic diagram maximum ratings (note 1.) symbol parameter condition 1 condition 2 rating units v cc power supply pecl mode v ee = 0 v 7 to 0 v v ee power supply necl mode v cc = 0 v 7 to 0 v v i pecl mode input voltage v ee = 0 v v i v cc 6 to 0 v necl mode input voltage v cc = 0 v v i v ee 6 to 0 v i out output current continuous surge 50 100 ma ma ta operating temperature range 40 to +85 c t stg storage temperature range 65 to +150 c q ja thermal resistance (junction to ambient) 0 lfpm 500 lfpm 8 soic 8 soic 190 130 c/w c/w q jc thermal resistance (junction to case) std bd 8 soic 41 to 44 c/w q ja thermal resistance (junction to ambient) 0 lfpm 500 lfpm 8 tssop 8 tssop 185 140 c/w c/w q jc thermal resistance (junction to case) std bd 8 tssop 41 to 44 c/w q ja thermal resistance (junction to ambient) 0 lfpm 500 lfpm 14 soic 14 soic 150 110 c/w c/w q jc thermal resistance (junction to case) std bd 14 soic 41 to 44 c/w t sol wave solder <2 to 3 sec @ 248 c 265 c 1. maximum ratings are those values beyond which device damage may occur.
mc100el1648 http://onsemi.com 3 pecl dc characteristics v cc = 5.0 v; v ee = 0.0 v +0.8 / 0.5 v (note 2.) 30 c 25 c 85 c symbol characteristic min typ max min typ max min typ max unit i ee power supply current 13 19 25 13 19 25 13 19 25 ma v oh output high voltage (note 3.) 3950 4170 4610 3950 4170 4610 3950 4170 4610 mv v ol output low voltage (note 3.) 3040 3410 3600 3040 3410 3600 3040 3410 3600 mv agc automatic gain control input 1690 1980 1690 1980 1690 1980 mv v bias bias voltage (note 4.) 1650 1800 1650 1800 1650 1800 mv v pp peaktopeak tank voltage tbd tbd tbd mv note: devices are designed to meet the dc specifications shown in the above table, after thermal equilibrium has been establishe d. the circuit is in a test socket or mounted on a printed circuit board and transverse air flow greater than 500 lfpm is maintained. 2. output parameters vary 1:1 with v cc . 3. 1.0 m w impedance. 4. this measurement guarantees the dc potential at the bias point for purposes of incorporating a varactor tuning diode at this point. necl dc characteristics v cc = 0.0 v; v ee = 5.0 v +0.8 / 0.5 v (note 5.) 30 c 25 c 85 c symbol characteristic min typ max min typ max min typ max unit i ee power supply current 13 19 25 13 19 25 13 19 25 ma v oh output high voltage (note 6.) 1050 830 399 1050 830 399 1050 830 399 mv v ol output low voltage (note 6.) 1960 1590 1400 1960 1590 1400 1960 1590 1400 mv agc automatic gain control input 3310 3020 3310 3020 3310 3020 mv v bias bias voltage (note 7.) 3350 3200 3350 3200 3350 3200 mv v pp peaktopeak tank voltage tbd tbd tbd mv note: devices are designed to meet the dc specifications shown in the above table, after thermal equilibrium has been establishe d. the circuit is in a test socket or mounted on a printed circuit board and transverse air flow greater than 500 lfpm is maintained. 5. output parameters vary 1:1 with v cc . 6. 1.0 m w impedance. 7. this measurement guarantees the dc potential at the bias point for purposes of incorporating a varactor tuning diode at this point. ac characteristics v cc = 0.0 v; v ee = 5.0 (+0.8 / 0.5 v) or v cc = 5.0 v; v ee = 0 v (note 8.) 40 c 25 c 85 c symbol characteristic min typ max min typ max min typ max unit (f) csr @ 25 khz offset, 1.0 hz bw 90 90 90 dbc/hz (f) csr @ 1.0 mhz offset, 1.0 hz bw 120 120 120 dbc/hz snr signal to noise ratio from carrier 40 40 40 db f sts frequency stability (supply drift) 3.6 3.6 3.6 khz/mv f stt frequency stability (thermal drift) 0.1 0.1 0.1 khz/ c hz second harmonic from carrier 25 25 25 dbc v dc output duty cycle 50 % f max (note 1) 1.1 1.1 1.1 ghz 8. frequency variation over temperature is a direct function of the d c/ d temperature and d l/ d temperature.
mc100el1648 http://onsemi.com 4 generic test circuits: bypass to supply opposite gnd figure 3. typical test circuit with alternate tank circuits 0.1 m f c l 8 (10) 1 (12) 4 (3) v cc * use high impedance probe (>1.0 megohm must be used). ** the 1200 ohm resistor and the scope termination impedance constitute a 25:1 attenuator probe. coax shall be ct07050 or equivalent. 3 (1) 2 (14) c l 4 (3) v cc 3 (1) 2 (14) v in f out tank #1 8 (10) 1 (12) * note 1 capacitor for tank may be variable type. (see tank circuit #3.) note 2 use high impedance probe (> 1 m ). test point f out tank #2 tank circuit option #1, varactor diode tank circuit option #2, fixed lc l = micro metal torroid #t2022, 8 turns #30 enameled copper wire (@ 40 nh) c = mmbv609 l = micro metal torroid #t2022, 8 turns #30 enameled copper wire (@ 40 nh) c = 3.035pf variable capacitance (@ 10 pf) 0.1 m f0.1 m f 0.1 m f0.1 m f 8 pin (14 pin) lead package 8 pin (14 pin) lead package ** 5 (5) 6 (7) 7 (8) v ee 0.1 m f 0.1 m f 0.01 m f 100 m f 5 (5) 6 (7) 7 (8) v ee 0.1 m f 0.1 m f 0.01 m f 100 m f 1 k 50% t a t b v p-p prf = 1.0mhz duty cycle (vdc) - t a t b figure 4. output waveform
mc100el1648 http://onsemi.com 5 operation theory figure 5 illustrates the simplified circuit schematic for the mc100el1648. the oscillator incorporates positive feedback by coupling the base of transistor q6 to the collector of q7. an automatic gain control (agc) is incorporated to limit the current through the emittercoupled pair of transistors (q7 and q6) and allow optimum frequency response of the oscillator. in order to maintain the high quality factor (q) on the oscillator, and provide high spectral purity at the output, transistor q4 is used to translate the oscillator s ignal to the output differential pair q2 and q3. figure 14 indicates the high spectral purity of the oscillator output (pin 4 on 8pin soic). transistors q2 and q3, in conjunction with output transistor q1, provide a highly buffered output that produces a square wave. the typical output waveform can be seen in figure 4. the bias drive for the oscillator and output buffer is provided by q9 and q11 transistors. in order to minimize current, the output circuit is realized as an emitterfollower buffer with an on chip pulldown resistor r e . figure 5. circuit schematic agc v ee tank bias v ee v cc v cc q4 q3 q2 q1 q5 d1 q8 q7 q6 q9 q10 q11 d2 output 800 1.36 k 1.6 k 3.1 k 660 167 400 330 16 k 82 400 660 510 2 (14) 3 (1) 4 (3) 1 (12) 5 (5) 8 (10) 7 (8) 6 (7) 8 pin (14 pin) lead package
mc100el1648 http://onsemi.com 6 figure 6. low frequency plot figure 7. high frequency plot 0.1 m f 1200* c l 8 (10) 1 (12) 4 (3) signal under test 10 m f 0.1 m f 3(1) 2 (14) tank #3 l = micro metal torroid #t2022, 8 turns #30 enameled copper wire (@ 40 nh) c = 3.035 pf variable capacitance (@ 10 pf) * the 1200 ohm resistor and the scope termination impedance constitute a 25:1 attenuator probe. coax shall be ct07050 or equivalent. 0.1 m f 1200* c l 8 (10) 1 (12) 4 (3) signal under test 10 m f 0.1 m f 3(1) 2 (14) tank #3 l = micro metal torroid #t2022, 8 turns #30 enameled copper wire (@ 40 nh) c = 3.035 pf variable capacitance (@ 10 pf) * the 1200 ohm resistor and the scope termination impedance constitute a 25:1 attenuator probe. coax shall be ct07050 or equivalent. frequency (mhz) capacitance (pf) 25 20 15 10 5 0 0 300 500 1000 2000 10000 measured frequency (mhz) calculated frequency (mhz) frequency (mhz) capacitance (pf) 100 80 60 40 20 0 0 0.2 0.3 300 30 measured frequency (mhz) calculated frequency (mhz) 8 pin (14 pin) lead package 8 pin (14 pin) lead package 5 (5) 6 (7) 7 (8) v ee 0.1 m f 0.1 m f 0.01 m f 100 m f 5 (5) 6 (7) 7 (8) v ee 0.1 m f 0.1 m f 0.01 m f 100 m f
mc100el1648 http://onsemi.com 7 fixed frequency mode the mc100el1648 external tank circuit components are used to determine the desired frequency of operation as shown in figure 8, tank option #2. the tank circuit components have direct impact on the tuning sensitivity, i ee , and phase noise performance. fixed frequency of the tank circuit is usually realized by an inductor and capacitor (lc network) that contains a high quality factor (q). the plotted curve indicates various fixed frequencies obtained with a single inductor and variable capacitor. the q of the components in the tank circuit has a direct impact on the resulting phase noise of the oscillator. in general, when the q is high the oscillator will result in lower phase noise. figure 8. fixed frequency lc tank frequency (mhz) capacitance (pf) 470 370 270 170 70 30 0.3 300 500 1000 2000 10000 measured frequency (mhz) calculated frequency (mhz) 570 0 0.1 m f c l 8 (10) 1 (12) 4 (3) v cc 3 (1) 2 (14) test point f out tank #2 5 (5) 6 (7) 7 (8) v ee 0.1 m f 0.1 m f 0.01 m f 100 m f 0.1 m f 0.1 m f note 1 capacitor for tank may be variable type. (see tank circuit #3.) note 2 use high impedance probe (> 1 m ). l = micro metal torroid #t2022, 8 turns #30 enameled copper wire (@ 40 nh) c = 3.035 pf variable capacitance (@ 10 pf) 8 pin (14 pin) lead package q l 100 only high quality surfacemount rf chip capacitors should be used in the tank circuit at high frequencies. these capacitors should have very low dielectric loss (highq). at a minimum, the capacitors selected should be operating at 100 mhz below their series resonance point. as the desired frequency of operation increases, the values of the tank capacitor will decrease since the series resonance point is a function of the capacitance value. typically, the inductor is realized as a surfacemount chip or a wound coil. in addition, the lead inductance and board inductance and capacitance also have an impact on the final operating point. the following equation will help to choose the appropriate values for your tank circuit design. f 0 1 2 l t *c t eq. 1 where l t = total inductance c t = total capacitance figure 9 and figure 10 represent the ideal curve of inductance/capacitance versus frequency with one known tank component. this helps the designer of the tank circuit to choose desired value of inductor/capacitor component for the wanted frequency. the lead inductance and board inductance and capacitance will also have an impact on the tank component values (inductor and capacitor). figure 9. capacitor value known (5 pf) inductance vs. frequency with 5 pf cap 5 10 15 20 25 30 35 40 45 50 0 700 1000 1300 160 400 frequency (mhz) inductance (nh) figure 10. inductor value known (4 nh) capacitance vs. frequency with 4 nh inductance 5 10 15 20 25 30 35 40 45 50 0 700 1000 1300 16 0 400 frequency (hz) capacitance (f)
mc100el1648 http://onsemi.com 8 voltage controlled mode the tank circuit configuration presented in figure 11, voltage controlled varactor mode, allows the vco to be tuned across the full operating voltage of the power supply. deriving from figure 6, the tank capacitor, c, is replaced with a varactor diode whose capacitance changes with the voltage applied, thus changing the resonant frequency at which the vco tank operates as shown in figure 3, tank option #1. the capacitive component in equation 1 also needs to include the input capacitance of the device and other circuit and parasitic elements. figure 11. voltage controlled varactor mode 50 70 90 110 130 150 170 190 024681 0 frequency (mhz) v in , input voltage (volts) plot 1. dual veractor mmbv609, v in vs. frequency c l 4 (3) v cc 3 (1) 2 (14) v in f out tank #1 8 (10) 1 (12) * 0.1 m f0.1 m f 5 (5) 6 (7) 7 (8) v ee 0.1 m f 0.1 m f 0.01 m f 100 m f ** 1 k * use high impedance probe (>1.0 megohm must be used). ** the 1200 ohm resistor and the scope termination impedance constitute a 25:1 attenuator probe. coax shall be ct07050 or equivalent. l = micro metal torroid #t2022, 8 turns #30 enameled copper wire (@ 40 nh) c = mmbv609 8 pin (14 pin) lead package when operating the oscillator in the voltage controlled mode with tank circuit #1 (figure 3), it should be noted that the cathode of the varactor diode (d), pin 8 (for 8 lead package) or pin 10 (for 14 lead package) should be biased at least 1.4 v above v ee . typical transfer characteristics employing the capacitance of the varactor diode (plus the input capacitance of the device, about 6.0 pf typical) in the voltage controlled mode is shown in plot 1, dual varactor mmbv609 vin vs. frequency. figure 6, figure 7, and figure 8 show the accuracy of the measured frequency with the different variable capacitance values. the 1.0 k resistor in figure 11 is used to protect the varactor diode during testing. it is not necessary as long as the dc input voltage does not cause the diode to become forward biased. the tuning range of the oscillator in the voltage controlled mode may be calculated as follows: f max f min c d (max) c s c d (min) c s eq. 2 where f min 1 2 ( l(c d (max) c s ) eq. 3 where c s = shunt capacitance (input plus external capacitance) c d = varactor capacitance as a function of bias voltage good rf and lowfrequency bypassing is necessary on the device power supply pins. capacitors on the agc pin and the input varactor trace should be used to bypass the agc point and the vco input (varactor diode), guaranteeing only dc levels at these points. for output frequency operation between 1.0 mhz and 50 mhz, a 0.1 m f capacitor is sufficient. at higher frequencies, smaller values of capacitance should be used; at lower frequencies, larger values of capacitance. at high frequencies, the value of bypass capacitors depends directly on the physical layout of the system. all bypassing should be as close to the package pins as possible to minimize unwanted lead inductance. several different capacitors may be needed to bypass various frequencies.
mc100el1648 http://onsemi.com 9 vaveform conditioning sine or square wave the peaktopeak swing of the tank circuit is set internally by the agc pin. since the voltage swing of the tank circuit provides the drive for the output buffer, the agc potential directly affects the output waveform. if it is desired to have a sine wave at the output of the mc100el1648, a series resistor is tied from the agc point to the most negative power potential (ground if positive volt supply is used, 5.2 volts if a negative supply is used) as shown in figure 12. at frequencies above 100 mhz typical, it may be desirable to increase the tank circuit peaktopeak voltage in order to shape the signal into a more square waveform at the output of the mc100el1648. this is accomplished by tying a series resistor (1.0 k minimum) from the agc to the most positive power potential (+5.0 volts if a positive volt supply is used, ground if a 5.2 volt supply is used). figure 13 illustrates this principle. figure 12. method of obtaining a sinewave output 10 12 78 3 5 output +5.0vdc 114 figure 13. method of extending the useful range of the mc100el1648 (square wave output) 10 12 78 3 5 output +5.0vdc 114 1.0k min spectral purity test voltage/current table (v cc = 0.0v, v ee = 5.2 v) conditions symbol 30 c +25 c +85 c units v ihmax 3.2 3.35 3.5 v v ilmin 3.7 3.85 4.0 v il 5.0 5.0 5.0 ma note: soic ado package guaranteed 30 c to +70 c only figure 14. spectral purity of signal output for 200 mhz testing 0.1 m f 1200* c l 8 (10) 1 (12) 5 (5) 4 (3) signal under test 10 m f 0.1 m f 3(1) 2 (14) 6 (7) 7 (8) spectral purity test circuit tank #3 l = micro metal torroid #t2022, 8 turns #30 enameled copper wire (@ 40 nh) c = 3.035 pf variable capacitance (@ 10 pf) ** the 1200 ohm resistor and the scope termination impedance constitute a 25:1 attenuator probe. coax shall be ct07050 or equivalent. 8 pin (14 pin) lead package v ee 0.1 m f 0.1 m f 0.01 m f 100 m f b.w. = 10 khz center frequency = 100 mhz scan width = 50 khz/div vertical scale = 10 db/div 99.8 99.9 100.0 100.1 100.2 spectral purity 10 db / dec
mc100el1648 http://onsemi.com 10 package dimensions dim min max min max inches millimeters a 2.90 3.10 0.114 0.122 b 2.90 3.10 0.114 0.122 c 0.80 1.10 0.031 0.043 d 0.05 0.15 0.002 0.006 f 0.40 0.70 0.016 0.028 g 0.65 bsc 0.026 bsc l 4.90 bsc 0.193 bsc m 0 6 0 6 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a does not include mold flash. protrusions or gate burrs. mold flash or gate burrs shall not exceed 0.15 (0.006) per side. 4. dimension b does not include interlead flash or protrusion. interlead flash or protrusion shall not exceed 0.25 (0.010) per side. 5. terminal numbers are shown for reference only. 6. dimension a and b are to be determined at datum plane -w-. seating plane pin 1 1 4 85 detail e b c d a g detail e f m l 2x l/2 u s u 0.15 (0.006) t s u 0.15 (0.006) t s u m 0.10 (0.004) v s t 0.10 (0.004) t v w 0.25 (0.010) 8x ref k ident k 0.25 0.40 0.010 0.016 tssop8 dt suffix case 948r02 issue a so8 d suffix case 75107 issue w seating plane 1 4 5 8 n j x 45 k notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a and b do not include mold protrusion. 4. maximum mold protrusion 0.15 (0.006) per side. 5. dimension d does not include dambar protrusion. allowable dambar protrusion shall be 0.127 (0.005) total in excess of the d dimension at maximum material condition. a b s d h c 0.10 (0.004) dim a min max min max inches 4.80 5.00 0.189 0.197 millimeters b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.053 0.069 d 0.33 0.51 0.013 0.020 g 1.27 bsc 0.050 bsc h 0.10 0.25 0.004 0.010 j 0.19 0.25 0.007 0.010 k 0.40 1.27 0.016 0.050 m 0 8 0 8 n 0.25 0.50 0.010 0.020 s 5.80 6.20 0.228 0.244 x y g m y m 0.25 (0.010) z y m 0.25 (0.010) z s x s m
mc100el1648 http://onsemi.com 11 soic eiaj14 m suffix case 96501 issue o z d h e e 1 14 8 7 b a 1 a e l dim min max min max inches 2.05 0.081 millimeters 0.05 0.20 0.002 0.008 0.35 0.50 0.014 0.020 0.18 0.27 0.007 0.011 9.90 10.50 0.390 0.413 5.10 5.45 0.201 0.215 1.27 bsc 0.050 bsc 7.40 8.20 0.291 0.323 0.50 0.85 0.020 0.033 1.10 1.50 0.043 0.059 0 0.70 0.90 0.028 0.035 1.42 0.056 a 1 a b c d e e l m z h e q 1 l e 10 0 10 l e q 1 c m view p detail p notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimensions d and e do not include mold flash or protrusions and are measured at the parting line. mold flash or protrusions shall not exceed 0.15 (0.006) per side. 4. terminal numbers are shown for reference only. 5. the lead width dimension (b) does not include dambar protrusion. allowable dambar protrusion shall be 0.08 (0.003) total in excess of the lead width dimension at maximum material condition. dambar cannot be located on the lower radius or the foot. minimum space between protrusions and adjacent lead to be 0.46 ( 0.018). 0.13 (0.005) m 0.10 (0.004)
mc100el1648 http://onsemi.com 12 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mc100el1648/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland

▲Up To Search▲

Price & Availability of MC100EL1648-D

	To Download MC100EL1648-D Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .